| 1. | Optimal dose range
可找出适当的疗效剂量 |
| 2. | Simulating threshold voltage shift of mos devices due to radiation in the low - dose range
低剂量辐照条件下的mosfet因辐照导致的阈值电压漂移的模拟 |
| 3. | In the linear dose range , the extensive uncertainty of alanine / esr dosimetry system is 4 % for 60co y - ray irradiation and 6 % for electron beam irradiation ( in 95 % confidence level )
在线性剂量范围内，该剂量体系测量60co射线和电子束吸收剂量的扩展不确定度分别为4 . 2和6 . 2 ( 95置信水平) ，适合作为电子束传递剂量标准。 |
| 4. | The linear factor is better than 0 . 9999 for y rays and 0 . 9995 for electron beams . it ' s esr response is increased in 0 . 26 % / ? in the range of 15 ~ 50 ? for irradiation temperature , no evident change found for different dose ranges
在辐照温度15 50 、照射的剂量5 50kgy范围内，温度每升高1 ，其esr响应值升高0 . 26 ，且未发现随吸收剂量的不同而有明显的改变。 |
| 5. | The purified plasmid dna was irradiated with the dose ranged from l . ogy to lo . ogy . using the advanced atomic force microscopy ( afm ) and molecular biological technology - - - - - - electrophoresis technology , the dna samples were observed experimentally and resulted in the follows : 1
运用上海爱建研制的原子力显微镜和di的原子力显微镜成功地观测到了dna链及其碎片，表明我们已基本上掌握了dna样品的制样技术和afm观测技术。 |
| 6. | An analytical mosfet threshold voltage shift model due to radiation in the low - dose range has been developed for circuit simulations . experimental data in the literature shows that the model predictions are in good agreement . it is simple in functional form and hence computationally efficient . it can be used as a basic circuit simulation tool for analysing mosfet exposed to a nuclear environment up to about 1mrad . in accordance with common believe , radiation induced absolute change of threshold voltage was found to be larger in irradiated pmos devices . however , if the radiation sensitivity is defined in the way we did it , the results indicated nmos rather than pmos devices are more sensitive , especially at low doses . this is important from the standpoint of their possible application in dosimetry
该模型物理意义明确，参数提取方便，适合于低辐照总剂量条件下的mos器件与电路的模拟。并进一步讨论了mosfet的辐照敏感性。结果表明，尽管pmos较之nmos因辐照引起的阈值电压漂移的绝对量更大，但从mosfet阈值电压漂移量的摆幅这一角度来看，在低剂量辐照条件下nmos较之pmos显得对辐照更为敏感。 |
| 7. | An ion implanter without ion mass analyzer was applied to simulate the phi procedure to fabricate soi materials by implantation of water plasma ions . thin soi structure was successfully fabricated by the implanter using 50 ~ 90kev water plasma ion implantation with the dose ranging from 2 - 6 . 5 + 017cm - 2 and , subsequently , the high temperature annealing
我们使用无质量分析器的离子注入机，模拟等离子体离子注入过程，成功地在该注入机上用水等离子体离子注入制备出了界面陡峭、平整，表层硅单晶质量好，埋层厚度均匀的薄型soi材料。 |
| 8. | It also makes certain of the best parameters for esr measurement of alanine film dosimeter , which is produced in big batch by extruding , 30 x 7 . 5 x 0 . 2mm3 in dimension , and it ' s batch homogeneity is better than 0 . 7 % . it ' s useful dose range is about 20 - 3 x 105gy and linear range is 102 ~ 104gy
目前该体系的有用剂量范围为20 3 105gy ，在线性剂量范围10 ~ 2 10 ~ 4gy内， esr响应值与吸收剂量呈良好的对数线性关系，对60co射线照射其剂量响应线性好于0 . 9999 ，对电子束照射则好于0 . 9995 。 |
